Abstract
Excellent electrical-passivation of p-type Si (p-Si) in Si solar cells has been achieved by post-deposition rapid annealing of aluminum oxide (AlOx) films prepared by catalytic chemical vapor deposition (Cat-CVD) using trimethyl aluminum (TMA) and O2. Extremely small surface recombination velocity of below 0.1cm/s has been obtained at post-deposition annealing temperatures in the range of 350–400°C for an annealing time of 2min. The reduction of surface recombination velocity has been attributed to band bending induced by a fixed negative charge density of 5×1011charges/cm2 and an additional small interface trapping density of around 1010cm−2eV−1.
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