Abstract
Emission and shape characteristics of the InGaAs covered InAs quantum dots with GaNAs strain compensation layers (SCLs) are investigated, focusing on the reduction of the spacer thickness for device applications. Using the GaNAs SCL, the suppression of inhomogeneous emission broadening induced by the compressive strain from lower dot layers was confirmed with the suppression of increase in the dot size of upper dot layers. This result is effective for the suppression of the spacer thickness.
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