Reduction of solution-processed copper-oxide-based transistors’ contact resistance using aluminium electrodes

Abstract

MOSs have drawn great attention in recent years for their potential for low-cost applications. In particular, solution-processed copper oxide transistors have been envisioned; however, research on these has struggled because of their low effective mobility and the high cost of metals used for injection electrodes. Here we report the application of gold and aluminium in source/drain electrodes of the device using cupric oxide as an active layer. Detailed analysis of the contact resistance illustrates a lower injection barrier for aluminium electrodes, making them a suitable replacement for high-cost gold electrodes.