Abstract
A GaAs surface-cleaning method using UVO3 treatment was developed. The UVO3 treatment involves two processes: GaAs surface oxidation and oxide removal. Surface oxidation is performed by using a mercury lamp at high temperature, such as 180°C. GaAs oxide is removed by NH4OH solution dipping. Spectroscopic ellipsometry and X-ray photoelectron spectroscopy (XPS) study showed that thermally unstable As oxides exist on a non-treated surface; however, surface GaAs oxides are almost completely removed by this treatment. This cleaning method was applied in the field effect transistor (FET)-gate-formation process and, consequently, Schottky leakage current was significantly reduced.
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