Reduction of p-ZnSe/p-GaAs non-ohmic barrier by inserting a GaN buffer layer

Abstract

Nitrogen (N) radical irradiated GaAs was investigated by Auger analysis and reflection high-energy electron diffraction. N radical beam irradiation on GaAs causes an exchange of As atoms for N atoms, consequently forming a GaN layer onto the GaAs surface without a Ga source. No degradation of the ZnSe layers was observed when they were grown on GaAs substrates with GaN buffer layers. The current-voltage and capacitance-voltage characteristics of p-ZnSe/p-GaAs heterodiodes are examined. The necessary voltage for hole injection across the p-ZnSe/p-GaAs heterojunction is reduced to about half when a thin GaN buffer layer is inserted into the junction.