Abstract
The reason why electrical characteristics of GaAs films grown on CaF2/Si(111) structures at high substrate temperature (600°C) are degraded is studied. Rutherford backscattering spectroscopy (RBS) measurements and secondary ion mass spectroscopy (SIMS) observations revealed that the degradation was due to point defects which resulted from a degraded interface region formed by mutual diffusion between GaAs and CaF2. It was found that the 2-step growth method was effective in reducing the point defects of GaAs film.
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