Abstract
The initial growth of GaAs films on porous Si substrates has been investigated using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS). XPS measurements show that at a considerably low temperature, clean porous Si surfaces are easily obtained. To obtain atomically flat GaAs films, thicker buffer layers of GaAs (2000–4000 Å) are needed. From RBS measurements, a minimum channeling yield χ min of 7% is obtained, smaller than the results reported previously. The results show that porous Si is a promising candidate for obtaining GaAs films with good crystalline quality on Si substrates.
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