Reduction of point defect density in cubic GaN epilayers on (0 0 1) GaAs substrates using Al [formula omitted]Ga [formula omitted]N/GaN superlattice underlayers

Abstract

Effects of Al x Ga 1 - x N/GaN superlattice (SL) insertion on the structural homogeneity, photoluminescence (PL) lifetime, and defect densities were studied in cubic ( c-) GaN epilayers on (0 0 1) GaAs substrates grown by low-pressure metalorganic vapor-phase epitaxy. Values of the full-width at half-maximum (FWHM) of both the (0 0 2) X-ray diffraction peak and near-band-edge excitonic PL peak were decreased by a factor of 2, and the room-temperature PL intensity was improved by a factor greater than 10 through the use of double 15-period 3.8-nm-thick Al 0.35 Ga 0.65 N/2.5-nm-thick GaN SL layers between the c-GaN epilayer and the c-GaN template layer prepared on a substrate-decomposition-shielding GaN layer deposited at a low temperature. The density or size of Ga-vacancy ( V Ga )-related defects in the c-GaN epilayer was also significantly reduced, and simultaneous increase in the excitonic PL lifetime at 293 K from approximately 20 ps to 230 ps indicated a tremendous reduction of the nonradiative defect density.