Abstract
High quality AlN thin films were grown by Low Pressure Organometallic Vapor Phase Epitaxy(LP-OMVPE) on sapphire and Si substrates. oxygen contamination in the Al layers can be reduced drastically by fine tuning of the growth parameters, by avoiding O-containing substrates, and by using a cap GaN layer. AlN films grown on Si, exhibiting oxygen concentration levels of [O] ≤ 1019 cm−3, display an X-Ray Diffraction Full Width Half Maximum (FWHM) of 190 arcsec and an extremely sharp near band-edge cathodoluminescence emission at 5.925 eV with FWHM of 30 meV and 5.975 eV (unresolved). (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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