Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Abstract

Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified.