Abstract
In this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study.
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