Abstract
The effect of structural defects on electron mobilities has been investigated in InSb quantum wells (QWs) grown on GaAs (001) substrates. The usefulness of a ⟨116⟩-directional transmission electron microscopy analysis for microtwins (MTs) in a plan-view specimen is demonstrated. MTs and threading dislocations reduce the room-temperature (RT) electron mobility in InSb QWs. It is found that the use of 2° off-axis GaAs (001) substrates is effective in reducing MT densities in InSb QWs. The electron mobility in InSb QW at RT, 4.0×104cm2∕Vs with an electron density of 4.6×1011∕cm2, is among the highest values reported in semiconductor QWs.
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