Reduction of Kink Effect of Poly-Si TFT With Bottom Field Plate by Dispersing Current Density Technique

Abstract

A new multiple-gate poly-Si thin-film transistor (TFT) with a bottom field plate (FP) is proposed. The FP disperses the high current density away from the top corner of the spacer channel with the highest electric field, leading to an improved kink effect. Moreover, owing to an inversion layer induced by the FP at the bottom region of spacer poly-Si channel, a higher on-state current is achieved. In addition, the electric field near drain area is reduced, leading to a lower off-state current. Overall, the new multiple-gate poly-Si TFT shows improved characteristics as compared with the counterpart without a bottom FP.