Abstract
Processes to form aluminum oxide as a gate insulator on the 4H-SiC Si-face are investigated to eliminate the interface state density (DIT) and improve the mobility. Processes that do not involve the insertion or formation of SiO2 at the interface are preferential to eliminate traps that may be present in SiO2. Aluminum oxide was formed by atomic layer deposition with hydrogen plasma pretreatment followed by annealing in forming gas. Hydrogen treatment was effective to reduce DIT at the interface of aluminum oxide and SiC without a SiO2 interlayer. Optimization of the process conditions resulted in DIT for the metal oxide semiconductor (MOS) capacitor of 1.7×1012 cm−2eV−1 at 0.2 eV, and the peak field-effect mobility of the MOS field-effect transistor (MOSFET) was approximately 57 cm2V−1s−1.
Highlights
Low channel performance at SiO2/4H-SiC interfaces due to a high interface state density (DIT)[1] and low channel mobility has been a problem of both scientific and practical interest.[2]
Aluminum oxide has been investigated as a gate insulator on SiC,[12,13,14,15,16,17,18] reports on metal-oxide-semiconductor field-effect transistors (MOSFETs) are limited.[16,17,18]
The C-V system was used to evaluate the quasi-static capacitance from the measured charge with elimination of the leakage current component; the capacitance cannot be accurately evaluated when most of the measured charge originates from the leakage current
Summary
Low channel performance at SiO2/4H-SiC interfaces due to a high interface state density (DIT)[1] and low channel mobility has been a problem of both scientific and practical interest.[2]. Hironori Yoshioka (吉岡裕典), Masashi Yamazaki (山崎将嗣) and Shinsuke Harada (原田信介)
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