Abstract
We report that annealing in low-oxygen-partial-pressure (low-pO2) ambient is effective in reducing the interface state density (DIT) at a SiC (0001)/SiO2 interface near the conduction band edge (EC) of SiC. The DIT value at EC − 0.2 eV estimated by a high (1 MHz)-low method is 6.2 × 1012 eV−1 cm−2 in as-oxidized sample, which is reduced to 2.4 × 1012 eV−1 cm−2 by subsequent annealing in O2 (0.001%) at 1500 °C, without interface nitridation. Although annealing in pure Ar induces leakage current in the oxide, low-pO2 annealing does not degrade the oxide dielectric property (breakdown field ∼10.4 MV cm−1).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
