Abstract
Optical and structural properties of CdxZn1-xSe ternary alloy layers grown by molecular-beam epitaxy (MBE) have been studied as a function of the Se/(Cd, Zn) beam pressure ratio (BPR). With increasing Se/(Cd, Zn) BPR, the inhomogeneous broadening of exciton luminescence and the rms roughness of surfaces decreased drastically. This indicates that Se-excess supply during MBE growth suppresses alloy composition fluctuation and also enhances two-dimensional growth nucleation. Furthermore, CdxZn1-xSe–ZnSe multiple quantum well (MQW) structures have been fabricated under Se-excess supply. Biexciton luminescence from MQW structures was observed, even under a cw weak excitation condition (less than 100 mW/cm2). This observation reflects the finding that exciton lifetime increase as a result of the improvement of crystalline quality, which results in the enhancement of carrier accumulation.
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