Abstract
A significant improvement of the electronical properties of metal-Al2O3-InP structures is obtained after treating InP substrates at 500 °C in an As overpressure (10−6 Torr). The density of fast interface states near the conduction-band edge is markedly reduced and drift phenomena are greatly suppressed, as compared to results obtained with chemically etched reference substrates. An interpretation of these effects is given based on the compensation of phosphorus vacancies by As atoms more strongly attached to the InP surface than P atoms.
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