Abstract
1.9-nm-thick epitaxial metal (CoSi2) films were grown on relaxed or pseudomorphic CaF2/Si(111) and their electrical resistance was measured. It was found that the electrical resistance of the CoSi2 film on pseudomorphic CaF2 was about half of that on relaxed CaF2. This result can be attributed to the improved of flatness and crystalline quality of the CoSi2 by using of pseudomorphic CaF2 instead of relaxed CaF2 due to the flat pseudomorphic CaF2 surface and the small lattice mismatch between CoSi2 and pseudomorphic CaF2.
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