Abstract
Reduction of the critical current density (Jc) in magnetic tunnel junctions (MTJs) can be achieved by replacing the standard Co40Fe40B20 free layer with a synthetic antiferromagnet. Patterned MTJs prepared by ion-beam assisted deposition (nanopillars, sizes down to 60 nm × 80 nm) with 2 nm CoFeB free layer and Co40Fe40B20/Ru (tRu)/ Co40Fe40B20 as a synthetic free layer (SyF) were studied. We have measured critical current density of CIMS in thermally activated switching regime (long current pulses). Values of switching current densities for standard MTJs with SyF were of the order 106 A/cm2, whilst MTJs with standard free layer demonstrated up to four times higher values of Jc.
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