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Abstract
The results of diamond-abrasive treatment of the reverse side of silicon carbide semiconductor plates of polytypes 4H and 6H are presented. Dimensions of surface microcracks of ceramic plates after abrasive treatment with pastes with diamond powder of different grain size are investigated, and also relationship between length of surface microcrack and rate of material removal depending on technological modes of diamond-abrasive treatment is established. As a result, a new method of single-sided abrasion treatment of thin ceramic plates is proposed, which ensures reduction of crack formation.
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