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Abstract
The study is aimed at reducing defects in the manufacture of semiconductors made of silicon carbide, which is achieved by studying the effect of technological modes of machining with loose abrasive (diamond micro-powder in a special paste) on the crack resistance of silicon carbide plates.
 The results of diamond abrasive treatment of silicon carbide plates of 4H and 6H polytypes are given. The dimensions of surface micro cracks of ceramic substrates after machining with diamond powder pastes of various grit are studied, and the interconnection between the length of the surface micro crack and the material removal rate, depending on the technological modes of diamond abrasive treatment, is established.
 For the first time, a scientifically based approach to choosing modes of diamond abrasive treatment of silicon carbide plates of various polytypes is proposed, in which appearing micro cracks are not capable of destroying the product at the subsequent technological stages of manufacturing semiconductors.
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