Abstract
We have grown intentionally undoped β-FeSi2 thin films on Si(111) substrates by atomic hydrogen-assisted molecular beam epitaxy. The conductivity of β-FeSi2 films changed from p to n-type, and the carrier concentration decreased drastically from the order of 1019 to that of 1016cm−3. These results show that the atomic hydrogen played an important role to decrease the number of Si vacancies acting as acceptors.
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