Abstract
In this study, we demonstrate voltage-driven dynamic magnetization switching for the write error rate (WER) of the order of 10−5. The largest voltage effect on the perpendicular magnetic anisotropy in Ta/(CoxFe100–x)80B20/MgO structure (x = 0, 10, 31, 51) is obtained for x = 31 after annealing at 250 °C. Based on investigations using perpendicularly magnetized magnetic tunnel junctions that have different (Co31Fe69)80B20 free layer thicknesses, we demonstrate that the improvement in the thermal stability factor is important to reduce the WER. Our results will facilitate the design of highly reliable, voltage–torque, magnetoresistive random access memory.
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