Abstract
Sidewall recombination in SiO2-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8×106 to 4×104 cm/s.
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