Abstract
In this study, we theoretically studied the enhancement of carrier injection by employing heterostructure layers before p-GaN in green light-emitting diodes. It is evident from the simulation results that improved carrier injection results in high internal quantum efficiency and light output power in the structures using heterostructures on the p-side. In comparison to conventional structure, reduced efficiency droop is observed suggesting promising high-performance green light-emitting diodes.
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