Abstract
Abstract Deep level transient spectroscopy has been used to observe the reduced concentrations of γ-ray induced defects in Ge containing atomic hydrogen. Data are presented on the efficiency and depth of this damage reduction as a function of the duration and temperature of the exposure of the plasma used to introduce the atomic hydrogen. A 3-hour exposure in an H plasma at 300°C before irradiation reduced the γ-induced defect concentration by half or more to a depth of ∼40 μm, compared with that of the control samples.
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