Abstract
Quenching experiments have been performed on both n- and p-type Ge in a dedicated furnace using infrared lamp heating. The capture and emission characteristics of the induced deep-level defects in the quenched samples were investigated by means of deep level transient spectroscopy. For all defect levels, a high impact of capture in the transition region (slow capture) was found. An empirical approach to analyse this effect is presented, which allows to extract reliable capture cross section parameters. The defect parameters thus obtained were compared with previously published data and it was found that some prominent quenching-induced deep levels are related to metal impurities (Cu and Ni), while others may be vacancy-related.
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