Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device

Soufiane Derrouiche

doi:10.15598/aeee.v19i4.3820

Abstract

In this paper, we present the dependence of source resistance sensibility on the gate bias effect in a High Electron Mobility Transistor (HEMT) using the Drift-Diffus (D-D) model with the SILVACO Technology Computer-Aided Design (TCAD) tool. The obtained results show that the increases of gate bias effect on substrate lead to decreasing the source resistance of the simulated device. The reported increase in the effect of gate induces the increases of transferred holes concentration towards the source region and which induce the decreases of source resistance. The decrease of source resistance can also be made by reducing the buffer thickness which leads to an increase in the gate effect on the substrate. The source resistance value is influenced by the Drain-Induced Barrier Lowering (DIBL) effect where the rate of decreasing the source resistance will be decreasing consequently to increase the drain bias. The reduction of the source resistance induces the increase of device sensibility for lows values of current.

Highlights

High Electron Mobility Transistor (HEMT) or Heterojunction Field Effect Transistors are important element for devices that operate in the terahertz range, and power electronics applications [1], [2] and [3]
We present the dependence of source resistance sensibility on the gate bias effect in a High Electron Mobility Transistor (HEMT) using the Drift-Diffus (D-D) model with the SILVACO Technology Computer-Aided Design (TCAD) tool
Both figures shown that the decrease of buffer layer thickness induces the decrease of source resistance due to increasing the field effect on the substrate, where it will be intense

Summary

Introduction

High Electron Mobility Transistor (HEMT) or Heterojunction Field Effect Transistors are important element for devices that operate in the terahertz range, and power electronics applications [1], [2] and [3]. Many studies and structures are developed for this technology covering all areas and fields of electronics [9], [10], [11], [12], [13] and [14], recently it is the preferred technology for low-power and high-speed applications due to high operating frequency reaching the terahertz range [15], [16] and [17]. A significant increase of accumulated hole concentration occurs under the source region, decreasing the source resistance

Device Structure

Results and Discussion

Conclusion