Reducing single event upset by lowering the threshold voltage of transistors

Abstract

The influence of threshold voltages of the transistors on the linear energy transfer (LET) threshold of single event upset (SEU) for a static random access memory (SRAM) cell with six transistors has been studied by simulation. The obtained results show that, with a constant operation voltage, the LET threshold for upset can be increased by lowering the threshold voltage of the transistors, without any other changes in device structure parameters. The simulation results also indicate that there is basically a linear correlation between the LET threshold and the threshold voltage of the transistors.