Abstract
In state-of-the-art, large format, HgCdTe-based infrared focal plane arrays the typical pixel size (3–10 $$\upmu \mathrm{m}$$) is of the order of the operating wavelength and much smaller than the carrier diffusion length. This makes inter-pixel crosstalk a limiting factor, especially in planar structures. Employing three-dimensional electromagnetic and electrical simulations we show that, besides reducing the dark current through Auger suppression, majority carrier depletion of the detector absorber is also effective in curtailing the inter-pixel crosstalk due to carrier diffusion. In the case of a $$5\,\upmu \mathrm{m}$$-pitch pixel, a proper design of the absorber composition and doping profile allows to reduce inter-pixel crosstalk by more than a factor of two when increasing the reverse bias from $$-\,0.1$$ to $$-\,0.5\,\mathrm{V}$$, keeping the contribution to crosstalk coming from carrier diffusion between 2 and 12% in the mid- and long-wavelength infrared spectrum.
Published Version
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