Abstract
The major drawback of half-Heusler-based thermoelectric materials lies in their relatively high thermal conductivity . In this work, nanolaminated structures composed of the half-Heusler phase M CoSb or M (Fe 1− x Ni x )Sb and NiAs-type phase M Sb ( M = Ti, Zr) are fabricated by the arc-melting method. A significant reduction in the thermal conductivity is achieved due to effective phonon scattering in the nanolaminated structure, while the electrical resistivity is low enough for thermoelectric applications because of the formation of coherent interfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.