Abstract
A modified tunnel barrier structure for the magnetic tunnel junction (MTJ) was fabricated by inserting a Hf layer in the middle of the Al2O3 tunnel barrier. MTJs with the Hf-inserted barrier show a higher tunnel mangnetoresistance (TMR) ratio and weaker temperature and bias-voltage dependence of TMR compared to the MTJs with a conventional Al2O3 barrier. The enhancement of the TMR ratio and the reduction of the temperature and bias-voltage dependence were attributed to the reduction of defects in the barrier.
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