Abstract
As the critical dimensions of IC circuits are decreased, more demands are put on the characteristics of epitaxial silicon layers. Reduced pressure provides an additional control parameter to use in efforts to achieve the required characteristics in the epitaxial deposits. In this review we discuss the impact of reduced pressure epitaxial growth on: the growth temperature, arsenic autodoping, pattern integrity, thickness and resistivity uniformity, and deposition rate. Epitaxial growth has been achieved at temperatures well under 900°C at reduced pressures, but low temperature pre-epitaxial substrate surface conditioning methods still need to be developed. Very significant improvement in the control of arsenic autodoping, pattern integrity, and resistivity and thickness uniformity has been achieved at reduced deposition pressures. The impact of pressure on autodoping is, at least qualitatively, understood. A number of aspects of the impact of pressure on pattern integrity are not understood.
Published Version
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