Abstract
The epitaxial silicon deposition from silane and chlorosilanes diluted in hydrogen carrier was analyzed by means of a multiscale approach that links together models related to different aspects of the growth as the deposition rate profile and the morphology of the obtained crystal. The model hierarchy here developed considers (a) the reactor model, (b) the terrace model (i.e., the description of the way the crystal grows and of the stability of the growth process) and (c) the elementary chemical kinetics. Each one of these models was solved in a 1D framework to obtain an overall picture of the deposition system without numerical complexities. Detailed kinetic mechanisms were proposed and comparisons with experimental data obtained in horizontal reactors were performed.
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