Abstract
A survey about the synthesis of inorganic thin films through Chemical Vapor Deposition processes is presented. Particular emphasis is placed on the chemical aspects embedded in reactor fluid dynamics. The role of most important process parameters on film properties and morphology is also illustrated regarding some of the most important processes by a technological point of view. In particular, the epitaxial silicon deposition in large scale barrel reactors, the developing of a detailed chemical mechanism for the growth of InP and GaAs in horizontal MOCVD reactors, the modeling of interface roughening and of the monolayer by monolayer growth will be addressed in detail.
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