Abstract

Silicon-air batteries (SABs), a new type of semiconductor air battery, have a high energy density. However, some side reactions in SABs cause Si anodes to be covered by a passivation layer to prevent continuous discharge, and the anode utilization rate is low. In this work, reduced graphene oxide (RGO) fabricated via high-temperature annealing or L-ascorbic acid (L.AA) reduction was first used to obtain Si nanowires/RGO-1000 (Si NWs/RGO-1000) and Si nanowires/RGO-L.AA (Si NWs/RGO-L.AA) composite anodes for SABs. It was found that RGO suppressed the passivation and self-corrosion reactions and that SABs using Si NWs/RGO-L.AA as the anode can discharge for more than 700 hours, breaking the previous performance of SABs, and that the specific capacity was increased by 90.8% compared to bare Si. This work provides a new solution for the design of high specific capacity SABs with nanostructures and anode protective layers.

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