Reduced Dislocation Densities in Liquid Phase Epitaxy Layers by Intermittent Growth

Abstract

liquid phase epitaxy (LPE) layers grown using an interrupted cooling rate to induce intermittent growth, exhibit an abrupt reduction in dislocation density ρ which coincides with the interface between growth increments. Constant cooling rates interrupted by partial melt‐back (heating) of the LPE layer or by isothermal annealing are both effective in reducing ρ, typically by factors of 3–6. Successive reductions in ρ could be achieved by employing several interruptions in cooling rate. These results are discussed in terms of proposed mechanisms for dislocation elimination in crystals.