Abstract
The achievement of low-resistance contact is a key requirement for carbon-electrodeelectronics. In this study, we have obtained contacts with very low resistance between anindividual single-walled carbon nanotube (SWNT) and palladium (Pd) electrodes usingelectric-current-induced Joule heating without destroying the field effect transistor devicethat these form. The SWNT is deposited onto Pd electrodes prepatterned on aSiO2/Si substrate, through which an electrical pulse is applied for a microsecond duration. As aresult, the source–drain current through the SWNT is greatly increased owing to theelimination of tunnelling barriers between the SWNT and the electrodes. In the case ofsemiconducting SWNTs, the Schottky barrier is estimated to increase slightly after pulseannealing in some cases, resulting in a relatively high resistance and asymmetricalcurrent–voltage characteristics.
Published Version
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