Abstract
Reduced backgating in modulation-doped field-effect transistors (MODFETs) is achieved by p-n junction isolation. Before growing buffer layer for transistors, an AlGaAs p-n junction is included for isolating devices. Backgating characteristics are measured as a function of mesa depth and a dramatic reduction in backgating is observed when the mesas reach beyond the p-n junction. The dc performance of the MODFET is found to be comparable to previous results without such a p-n junction. Following this approach, great reduction in crosstalk between devices could be obtained in digital circuits.
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