Abstract
Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.
Highlights
Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era
With the exponential increase in digital communication of the big data and artificial intelligence era[1], computing with enormous storage capacity and superior processing speed are of great demand for applications such as market trend analysis, real-time image processing, machine-learning and etc.[2,3,4,5,6]
Integration of computing and memory functions into a single component is an arduous challenge faced by global microelectronic community to eliminate the frequent yet encumbering data transfer through the von Neumann bottleneck
Summary
Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. The integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a highperformance electronic device that satisfies the nowadays increasing demands of data storage and processing In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. Associated with the electric field induced electrochemical reactions of the ferrocene pendant moieties, the ITO/PFTPA-Fc/Pt sandwich structure device exhibits consecutive resistive switching characteristics at either the low or high device current levels, executing the multilevel memory and the four basic decimal arithmetic operations of addition, subtraction, multiplication, and division, respectively. The integration of multilevel memory and computing capability into a single memristor device through molecular design and electronic properties tuning of polymer renders an essential strategy of obtaining highperformance electronic circuits that satisfies the increasing demands of data storage and processing nowadays
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