Abstract
The redistribution of Ni in InP is studied by annealing samples of InP implanted with 0.9 MeV Ni at 60o angle of ion incidence with respect to target surface normal as a function of dose (8.5×10 12 −4.5×10 15 cm −2 ). Ni profiles are measured by secondary ion mass spectrometry (SIMS) and implantation induced damage by Rutherford backscattering spectrometry in channeling (RBS/C) condition. The highest dose sample is characterised by remarkable Ni accumulation near the surface (at ∼ $0.3R_{\rm np}$ ) that has not been observed earlier along with two other distinct accumulation zones at R np + $\Delta R_{\rm np}$ and $2.2R_{\rm np}$ after annealing at 650 °C for 30 min. Here, R np is the normal component of the projected range for oblique angle bombardment.
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