Abstract
Abstract Here, we report the first demonstration of full InGaN-based red light-emitting diode (LED) grown on a c-plane ScAlMgO4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A/cm2). The light output power and external quantum efficiency were 12.6 µW and 0.016% at 40 mA (10.5 A/cm2), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes.
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