Rectifying structure with high voltage operation based on CuBO2 as an UV photocatalyst

Abstract

CuBO2/p-Si diode is a new rectifying structure with photosensing, which is a candidate for producing high voltage protection circuit in electronic application. It has been seen that the photocurrent in the reverse bias I–V characteristic is strongly increased by photo-illumination. It is believed that the combination of thin CuBO2 layer and p-Si will provide high voltage protection level, which does not exist for conventional Si diodes. The capacitance and conductance–voltage characteristics were measured at various frequencies. The results indicate that the electrical parameters of CuBO2/p-Si diode are affected by the series resistance and interface states. The optical properties of the CuBO2 thin film were analyzed by UV–vis–NIR spectrophotometry and FTIR studies. The optical band gap of the CuBO2 is located in the ultraviolet (UV) range. In this spectral range, the BOB bonds and relationship between Cu2+–O are confirmed.