Abstract

Broadband multilayer dielectric gratings (MDGs) with rectangular HfO2 grating profile were realized for the first time using a novel fabrication process that combines laser interference lithography, nanoimprint, atomic layer deposition and reactive ion-beam etching. The laser-induced damage initiating at the grating ridge was mitigated for two reasons. First, the rectangular grating profile exhibits the minimum electric-field intensity (EFI) enhancement inside the grating pillar compared to other trapezoidal profiles. Second, our etching process did not create nano-absorbing defects at the edge of the HfO2 grating where the peak EFI locates, which is unavoidable in traditional fabrication process. The fabricated MDGs showed a high laser induced damage threshold of 0.59J/cm2 for a Ti-sapphire laser with pulse width of 40 fs and an excellent broadband diffraction spectrum with 95% efficiency over 150 nm in TE polarization.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call