Abstract
Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μ mt hick 4c m 2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V ) measurement, quantum efficiency (QE) and light beam induced current (LBiC) are used as characterization methods.
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