Abstract
Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H–SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H–SiC due to ion implantation are observed. The recovery of the 6H–SiC crystallinity by a high temperature annealing at 1550 °C for 30 min after C–Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C–Al coimplanted epitaxial 6H–SiC are obtained nondestructively by these three optical techniques.
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