Abstract
The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 × 1015 to 1 × 1016cm-2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 × 1018 to 1 × 1020cm-3. It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height.
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