Abstract
In this work, we report synthesis and stability analysis of cesium tin iodide (CsSnI3) prepared through solid state and solution route methods for its application as a hole transport layer in dye sensitized solar cells (DSSC). Phase formation, chemical stability and degradation mechanism of CsSnI3 were studied using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and Raman spectroscopy. Optical band gap of the material was studied using UV–vis spectroscopy and photoluminescence studies. CsSnI3 synthesized through solid state route was used as a hole transport material (HTM) for dye sensitized solar cells with cell efficiency up to 3%. Temperature dependent excitonic emission studies shows that B-γ-CsSnI3 shows a linear increase in band gap with increasing temperature.
Published Version
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