Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors

Jiali Jiang,Tianqi Zhao,Dejun Han,Jianquan Jia,Kun Liang,Ru Yang

doi:10.3390/instruments1010005

Jiali Jiang, Tianqi Zhao + Show 4 more

Open Access

https://doi.org/10.3390/instruments1010005

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Journal: Instruments	Publication Date: Aug 9, 2017
Citations: 10	License type: CC BY 4.0

Affiliation: Beijing Normal University

Abstract

The silicon photomultiplier (SiPM) is a promising semiconductor device for low-level light detection. The recovery time, or the photon-counting rate of the SiPM is essential for high-flux photon detection in such applications as photon counting computer tomography (CT). A SiPM with epitaxial quenching resistors (EQR SiPM) has advantages in fabricating small APD microcells connected in series with lower quenching resistors, therefore, APD cells with a low RC time constant and a short recovery time can be expected. In this report, the recovery time of EQR SiPM has been investigated using both the double light pulse method and the waveform analysis method. The results show that the recovery time of EQR SiPM is strongly dependent on the size of the active area and the number of fired pixels. For a 3 × 3 mm2 device, while total about 90,000 pixels were fired, the recovery time was 31.1 ± 1.8 ns; while fired pixels were controlled to about 2000, the recovery time decreased significantly to 6.5 ± 0.4 ns; and the recovery time of one fired pixel was 3.1 ± 0.2 ns. For 1.4 × 1.4 mm2 device, the recovery time was 15.2 ± 0.5 ns, while a total of about 20,000 pixels were fired. Effects that may affect the recovery time of the SiPM, including strength of the pulse light, signal transmission time delay, and the readout electronics are discussed.

Highlights

The silicon photomultiplier (SiPM) is a new generation of highly sensitive semiconductor photodetector; consisting of multiple pixels of avalanche photodiodes operating in Geiger-mode, each pixel has dimensions ranging from several to several tens of microns, and is connected in parallel to a common load by a series resistor with a resistance ranging from 200 kΩ to 1 MΩ [1]
This is essential for high flux photon detection in such applications as photon counting computer tomography (CT) [4,5,6], which involves a high photon-counting rate and has potential to reduce the exposure time and radiation dose
According to the formula: trecharege ∼ Cd · Rq, the recovery time of EQR SiPM was estimated at ~3.1 ns, which is very close to the experimental result from the waveform analysis method for a single pixel of SiPM

Summary

Introduction

The silicon photomultiplier (SiPM) is a new generation of highly sensitive semiconductor photodetector; consisting of multiple pixels of avalanche photodiodes operating in Geiger-mode, each pixel has dimensions ranging from several to several tens of microns, and is connected in parallel to a common load by a series resistor with a resistance ranging from 200 kΩ to 1 MΩ [1]. The recovery time, or the photon-counting rate of SiPM is determined by the finite time taken to quench the avalanche, reset the diode voltage to its initial bias value. P/N junction as the quenching employs the un-depleted region in the epitaxial silicon layer below P/N junction as the quenching resistor. SiPM, can be constant of the pixel, or a short recovery time and fast counting rate for the EQR SiPM, can be expected. Thanks to the high geometrical fill factor of the EQR SiPM with a high density of micro of micro cells, both wide dynamic range and adequate can be realized at thetime, samewhich time, cells, both wide dynamic range and adequate.

Materials

3.3.Results

EQR SiPM

Conclusions