Abstract
The annealing behaviours of electrical resistance of aluminum films deposited on glass substrates were studied using a silicon oil bath which was set in a belljar. The isothermal aging curves for the films deposited on glass substrates at a rate of 200 Å sec-1 showed an increase in the resistance at the initial stage of the aging. The shape of the annealing curve is interpreted as a superposition of the decrease in the resistance due to the vacancy annihilation and of the increase in the resistance caused by the increase in the irregularity of the surface. The annealing kinetics at the latter stage of aging seems to be of the second order. The activation energy of this stage is estimated to be 0.62±0.03 eV for the films whose thicknesses range from 300 to 1800 Å.
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